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| MBD110DWT1, MBD330DWT1, MBD770DWT1 Preferred Device Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT-363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small six-leaded package. The SOT-363 is ideal for low-power surface mount applications where board space is at a premium, such as portable products. Surface Mount Comparisons: SOT-363 Area Max Package PD (mW) Device Count (mm2) 4.6 120 2 SOT-23 7.6 225 1 1 1 SOT-23 40% 2 SOT-23 70% SC-88 / SOT-363 CASE 419B STYLE 6 http://onsemi.com Anode 1 N/C 2 Cathode 3 6 Cathode 5 N/C 4 Anode Space Savings: Package SOT-363 The MBD110DW, MBD330DW, and MBD770DW devices are spin-offs of our popular MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT-23 devices. They are designed for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features MARKING DIAGRAM * * * * 6 xx M G G 1 Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage Pb-Free Packages are Available xx MAXIMUM RATINGS Rating Reverse Voltage MBD110DWT1 MBD330DWT1 MBD770DWT1 Symbol VR Value 7.0 30 70 120 -55 to +125 -55 to +150 Unit V = Device Code Refer to Ordering Table, page 2 M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) Forward Power Dissipation TA = 25C Junction Temperature Storage Temperature Range PF TJ Tstg mW C C ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. (c) Semiconductor Components Industries, LLC, 2007 1 March, 2007 - Rev. 5 Publication Order Number: MBD110DWT1/D MBD110DWT1, MBD330DWT1, MBD770DWT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mA) MBD110DWT1 MBD330DWT1 MBD770DWT1 CD MBD110DWT1 CT MBD330DWT1 MBD770DWT1 IR MBD110DWT1 MBD330DWT1 MBD770DWT1 NF MBD110DWT1 VF MBD110DWT1 MBD330DWT1 MBD770DWT1 - - - - - 0.5 0.38 0.52 0.42 0.7 0.6 0.45 0.6 0.5 1.0 - 6.0 - V - - - 0.02 13 9.0 0.25 200 200 - - 0.9 0.5 1.5 1.0 mA nA nA dB - 0.88 1.0 pF Symbol V(BR)R 7.0 30 70 10 - - - - - pF Min Typ Max Unit V Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1) Total Capacitance (VR = 15 Volts, f = 1.0 MHz) (VR = 20 Volts, f = 1.0 MHz) Reverse Leakage (VR = 3.0 V) (VR = 25 V) (VR = 35 V) Noise Figure (f = 1.0 GHz, Note 2) Forward Voltage (IF = 10 mA) (IF = 1.0 mA) (IF = 10 mA) (IF = 1.0 mA) (IF = 10 mA) ORDERING INFORMATION Device MBD110DWT1 MBD110DWT1G MBD330DWT1 MBD330DWT1G MBD770DWT1 MBD770DWT1G H5 T4 M4 Marking Package SC-88 / SOT-363 SC-88 / SOT-363 (Pb-Free) SC-88 / SOT-363 SC-88 / SOT-363 (Pb-Free) SC-88 / SOT-363 SC-88 / SOT-363 (Pb-Free) 3000 Units / Tape & Reel Shipping For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MBD110DWT1, MBD330DWT1, MBD770DWT1 TYPICAL CHARACTERISTICS MBD110DWT1 1.0 0.7 0.5 IR, REVERSE LEAKAGE (m A) VR = 3.0 V 0.2 0.1 0.07 0.05 100 IF, FORWARD CURRENT (mA) 10 TA = 85C TA = -40C 1.0 TA = 25C MBD110DWT1 0.02 MBD110DWT1 0.01 30 40 50 60 70 80 90 100 110 TA, AMBIENT TEMPERATURE (C) 120 130 0.1 0.3 0.4 0.5 0.6 VF, FORWARD VOLTAGE (VOLTS) 0.7 0.8 Figure 1. Reverse Leakage Figure 2. Forward Voltage 1.0 11 10 NF, NOISE FIGURE (dB) LOCAL OSCILLATOR FREQUENCY = 1.0 GHz (Test Circuit Figure 5) C , CAPACITANCE (pF) D 0.9 9 8 7 6 5 4 3 MBD110DWT1 2 4.0 1 0.1 0.2 0.8 0.7 MBD110DWT1 0.5 1.0 2.0 5.0 PLO, LOCAL OSCILLATOR POWER (mW) 10 0.6 0 1.0 2.0 3.0 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Capacitance Figure 4. Noise Figure LOCAL OSCILLATOR NOTES ON TESTING AND SPECIFICATIONS Note 1 - CD and CT are measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent). Note 2 - Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. Note 3 - LS is measured on a package having a short instead of a die, using an impedance bridge (Boonton Radio Model 250A RX Meter). UHF NOISE SOURCE H.P. 349A DIODE IN TUNED MOUNT NOISE FIGURE METER H.P. 342A IF AMPLIFIER NF = 1.5 dB f = 30 MHz Figure 5. Noise Figure Test Circuit http://onsemi.com 3 MBD110DWT1, MBD330DWT1, MBD770DWT1 TYPICAL CHARACTERISTICS MBD330DWT1 2.8 CT, TOTAL CAPACITANCE (pF) 2.4 2.0 1.6 1.2 0.8 0.4 0 f = 1.0 MHz t , MINORITY CARRIER LIFETIME (ps) MBD330DWT1 500 MBD330DWT1 400 KRAKAUER METHOD 300 200 100 0 0 3.0 6.0 9.0 12 15 18 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 0 10 20 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 Figure 6. Total Capacitance Figure 7. Minority Carrier Lifetime 10 MBD330DWT1 1.0 TA = 100C 100 MBD330DWT1 IF, FORWARD CURRENT (mA) TA = -40C 10 TA = 85C IR, REVERSE LEAKAGE (m A) TA = 75C 0.1 TA = 25C 1.0 TA = 25C 0.01 0.001 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30 0.1 0.2 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 1.2 Figure 8. Reverse Leakage Figure 9. Forward Voltage http://onsemi.com 4 MBD110DWT1, MBD330DWT1, MBD770DWT1 TYPICAL CHARACTERISTICS MBD770DWT1 2.0 CT, TOTAL CAPACITANCE (pF) f = 1.0 MHz 1.6 t , MINORITY CARRIER LIFETIME (ps) MBD770DWT1 500 MBD770DWT1 400 KRAKAUER METHOD 300 1.2 0.8 200 0.4 100 0 0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 50 0 10 20 40 60 30 50 70 IF, FORWARD CURRENT (mA) 80 90 100 Figure 10. Total Capacitance Figure 11. Minority Carrier Lifetime 10 MBD770DWT1 1.0 TA = 100C 100 MBD770DWT1 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE (m A) 10 TA = 85C TA = -40C TA = 75C 0.1 1.0 TA = 25C 0.01 TA = 25C 0.001 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 50 0.1 0.2 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) 1.6 2.0 Figure 12. Reverse Leakage Figure 13. Forward Voltage http://onsemi.com 5 MBD110DWT1, MBD330DWT1, MBD770DWT1 PACKAGE DIMENSIONS SC-88 / SC-70 / SOT-363 CASE 419B-02 ISSUE W D e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 ANODE 2 N/C CATHODE 1 ANODE 1 N/C CATHODE 2 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 6 5 4 HE 1 2 3 -E- b 6 PL 0.2 (0.008) M E M DIM A A1 A3 b C D E e L HE A3 C A STYLE 6: PIN 1. 2. 3. 4. 5. 6. A1 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 MBD110DWT1/D |
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